Epitaxial Si films on Ge(100) grown via H/Cl exchange
- S. Gates
- D.D. Koleske
- et al.
- 1993
- Applied Physics Letters
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150 results for Matthew Copel
Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111)
- F.K. LeGoues
- M. Horn-Von Hoegen
- et al.
- 1991
- Physical Review B
Are bare surfaces detrimental in epitaxial growth?
- M. Copel
- R.M. Tromp
- 1991
- Applied Physics Letters
A new two-dimensional particle detector for a toroidal electrostatic analyzer
- R.M. Tromp
- M. Copel
- et al.
- 1991
- Review of Scientific Instruments
Influence of surfactants in Ge and Si epitaxy on Si(001)
- M. Copel
- M.C. Reuter
- et al.
- 1990
- Physical Review B
Microstructure and strain relief of Ge films grown layer by layer on Si(001)
- F. Legoues
- M. Copel
- et al.
- 1990
- Physical Review B
Noble-metal adsorption on Si(111): Medium-energy ion-scattering results for the Ag (3×3)R30 reconstruction
- M. Copel
- R.M. Tromp
- 1989
- Physical Review B
Atomic structure of the arsenic-saturated Si(111) surface
- M. Copel
- R.M. Tromp
- et al.
- 1988
- Physical Review B
Structural perfection of the Si(111)-(1×1) As surface
- M. Copel
- R.M. Tromp
- 1988
- Physical Review B
Medium energy ion scattering analysis of reactive ion etched Si(001) surfaces
- M. Copel
- R.M. Tromp
- et al.
- 1988
- Applied Physics Letters