Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet DevicesH. ZhouM. Hasanuzzamanet al.2025IRPS 2025
High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallizationC.-H.C-H. LinBrian Greeneet al.2014IEDM 2014