High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014
Publications
Date
Featured collections
Popular topics
9 results for Ryan M. Martin
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Patterning of CMOS device structures for 40-80nm pitches and beyond
- Sebastian U. Engelmann
- R.M. Martin
- et al.
- 2012
- SPIE Advanced Lithography 2012
CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED
Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. the effect of oxygen addition
- Cheng-Che Hsu
- Nathan Marchack
- et al.
- 2013
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Highly selective silicon nitride etching to Si and SiO2 for a gate sidewall spacer using a CF3I/O2/H2 neutral beam
- Daiki Nakayama
- Akira Wada
- et al.
- 2013
- Journal of Physics D: Applied Physics
Plasma etching of Hf-based high- k thin films. Part III. Modeling the reaction mechanisms
- Ryan M. Martin
- Jane P. Chang
- 2009
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Plasma etching of Hf-based high- k thin films. Part II. Ion-enhanced surface reaction mechanisms
- Ryan M. Martin
- Hans-Olof Blom
- et al.
- 2009
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Plasma etching of Hf-based high- k thin films. Part I. Effect of complex ions and radicals on the surface reactions
- Ryan M. Martin
- Jane P. Chang
- 2009
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films