Double spin-torque magnetic tunnel junction devices for last-level cache applicationsG. HuC. Safranskiet al.2022IEDM 2022
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel JunctionsC. SafranskiG. Huet al.2022VLSI Technology and Circuits 2022
Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM ApplicationsChristopher SafranskiGuohan Huet al.2021IEEE T-ED