Breakdown measurements of ultra-thin SiO2 at low voltage
- J.H. Stathis
- A. Vayshenker
- et al.
- 2000
- VLSI Technology 2000
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59 results for Ernest Y. Wu
Challenges for accurate reliability projections in the ultra-thin oxide regime
- E. Wu
- W.W. Abadeer
- et al.
- 1999
- IRPS 1999
Modeling and characterization of n+- and p+-polysilicon-gated ultra-thin oxides (21-26 angstroms)
- S.H. Lo
- D.A. Buchanan
- et al.
- 1997
- VLSI Technology 1997
Reversing A Decades-Long Scaling Law of Dielectric Breakdown using Hydrogen-Plasma-Treated HfO2 ReRAM Devices
- Ernest Y. Wu
- Takashi Ando
- et al.
- 2023
- Advanced Electronic Materials
Mapping and statistical analysis of filaments locations in amorphous HfO2 ReRAM cells
- Franco Stellari
- Ernest Y. Wu
- et al.
- 2023
- Microelectronics Reliability
The Schottky emission effect: A critical examination of a century-old model
- Ernest Y. Wu
- Baozhen Li
- 2022
- Journal of Applied Physics
Gibbs spatial process for characterization of filament interaction in ReRAM devices via photon emission microscopy
- Ernest Wu
- Franco Stellari
- et al.
- 2022
- Applied Physics Letters
Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Japanese Journal of Applied Physics
A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Applied Physics Letters
Facts and Myths of Dielectric Breakdown Processes-Part II: Post-Breakdown and Variability
- Ernest Y. Wu
- 2019
- IEEE T-ED