Towards implementation of a nickel silicide process for CMOS technologies
- C. Lavoie
- F.M. D'Heurle
- et al.
- 2003
- Microelectronic Engineering
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162 results for Cyril Cabral
Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
- E. Gusev
- C. Cabral Jr.
- et al.
- 2003
- Microelectronic Engineering
Influence of substrate temperature during sputter deposition on the subsequent formation of titanium disilicide
- A.S. Özean
- K.F. Ludwig Jr.
- et al.
- 2002
- MRS Proceedings 2002
Characterization and monitoring of silicon-on-insulator fabrication processes by high-resolution x-ray diffraction
- G.M. Cohen
- P.M. Mooney
- et al.
- 2002
- MRS Proceedings 2002
Texture and resistivity of Cu and dilute Cu alloy films
- K. Barmak
- A. Gungor
- et al.
- 2002
- MRS Proceedings 2002
In-situ studies of silicide formation in Ti-Ta bilayer thin films on poly-Si
- A.S. Özcan
- K.F. Ludwig Jr.
- et al.
- 2002
- MRS Proceedings 2002
The growth of tantalum thin films by plasma-enhanced atomic layer deposition and diffusion barrier properties
- H. Kim
- C. Cabral Jr.
- et al.
- 2002
- MRS Proceedings 2002
Cu and dilute binary Cu(Ti), Cu(Sn) and Cu(Al) thin films: Texture, grain growth and resistivity
- A. Gungor
- K. Barmak
- et al.
- 2002
- MRS Proceedings 2002
A self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature
- G.M. Cohen
- C. Cabral Jr.
- et al.
- 2002
- MRS Proceedings 2002
An optimal liner for copper damascene interconnects
- D. Edelstein
- C. Uzoh
- et al.
- 2001
- ADMETA 2001