A self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature
- G.M. Cohen
- C. Cabral Jr.
- et al.
- 2002
- MRS Proceedings 2002
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162 results for Cyril Cabral
Cu and dilute binary Cu(Ti), Cu(Sn) and Cu(Al) thin films: Texture, grain growth and resistivity
- A. Gungor
- K. Barmak
- et al.
- 2002
- MRS Proceedings 2002
Texture and resistivity of Cu and dilute Cu alloy films
- K. Barmak
- A. Gungor
- et al.
- 2002
- MRS Proceedings 2002
Effects of alloying elements on cobalt silicide formation
- C. Lavoie
- C. Cabral Jr.
- et al.
- 2002
- Journal of Electronic Materials
In situ resistivity study of copper-cobalt films: Precipitation, dissolution and phase transformation
- S.-L. Zhang
- J.M.E. Harper
- et al.
- 2001
- Thin Solid Films
Formation of c54 tisi2: Effects of niobium additions on the apparent activation energy
- F.M. D’Heurle
- S.-L. Zhang
- et al.
- 2001
- Journal of Applied Physics
An optimal liner for copper damascene interconnects
- D. Edelstein
- C. Uzoh
- et al.
- 2001
- ADMETA 2001
Electrodes and barriers for dram and feram: Processing, integration, and fundamentals
- K.L. Saenger
- P.C. Andricacos
- et al.
- 2001
- MRS Online Proceedings Library
A self-aligned silicide process for thin silicon-on-insulator MOSFETs and bulk MOSFETs with shallow junctions
- G.M. Cohen
- C. Cabral Jr.
- et al.
- 2001
- MRS Proceedings 2001
The use of in situ X-ray diffraction, optical scattering and resistance analysis techniques for evaluation of copper diffusion barriers in blanket films and damascene structures
- C. Cabral Jr.
- C. Lavoie
- et al.
- 2001
- Thin Solid Films