Publications

61 results for P. Jamison

High-K gate dielectric structures by atomic layer deposition for the 32nm and beyond nodes
- - R.D. Clark
  - S. Consiglio
  - et al.
- 2008
- ECS Meeting 2008
Process and electrical characteristics of MO-ALD HfO₂ films for high-K gate applications grown in a production-worthy 300 mm deposition system
- - R.D. Clark
  - C.S. Wajda
  - et al.
- 2007
- ECS Meeting 2007
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- - V. Narayanan
  - V.K. Paruchuri
  - et al.
- 2006
- VLSI Technology 2006
Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETs
- - K.-L. Lee
  - M.M. Frank
  - et al.
- 2006
- VLSI Technology 2006
Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO₂/metal stacks
- - V. Narayanan
  - K. Maitra
  - et al.
- 2006
- IEEE Electron Device Letters
A comparison of electrical and physical properties of MOCVD hafnium silicate thin films deposited using various silicon precursors
- - P. Jamison
  - M. Copel
  - et al.
- 2006
- MRS Spring Meeting 2006
Reduction of hafnium oxide and hafnium silicate by rhenium and platinum
- - M. Copel
  - R.P. Pezzi
  - et al.
- 2006
- Applied Physics Letters
Electron mobility dependence on annealing temperature of W/HfO ₂ gate stacks: The role of the interfacial layer
- - A.C. Callegari
  - P. Jamison
  - et al.
- 2006
- Journal of Applied Physics
Systematic study of workfunction engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacks
- - Y.-H. Kim
  - C. Cabral Jr.
  - et al.
- 2005
- IEDM 2005
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- - R. Jammy
  - V. Narayanan
  - et al.
- 2005
- ISTC 2005