Shallow p+ junction formation by a reverse-type dopant preamorphization scheme
- E. Ganin
- B. Davari
- et al.
- 1989
- Applied Physics Letters
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75 results for Dave Harame
Base Profile Design for High-Performance Operation of Bipolar Transistors at Liquid-Nitrogen Temperature
- Johannes M. C. Stork
- David L. Harame
- et al.
- 1989
- IEEE T-ED
Heterojunction Bipolar Transistors Using Si-Ge Alloys
- Subramanian S. Iyer
- Gary L. Patton
- et al.
- 1989
- IEEE T-ED
Nonequilibrium boron doping effects in low-temperature epitaxial silicon films
- B.S. Meyerson
- F. Legoues
- et al.
- 1987
- Applied Physics Letters
Electrical characteristics of diodes fabricated in selective-epitaxial silicon wells
- David Harame
- Barry Ginsberg
- et al.
- 1987
- Solid State Electronics