Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
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91 results for John Bruley
Formation of compositionally abrupt axial heterojunctions in silicon-germanium nanowires
- C.-Y. Wen
- M.C. Reuter
- et al.
- 2009
- Science
Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
- K. Choi
- H. Jagannathan
- et al.
- 2009
- VLSI Technology 2009
Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)
- Martin M. Frank
- SangBum Kim
- et al.
- 2009
- Microelectronic Engineering
Cr migration on 193nm binary photomasks
- John Bruley
- Geoffrey Burr
- et al.
- 2009
- SPIE Advanced Lithography 2009
Electrical and materials characterization of reactive and co-sputtered tantalum carbide metal electrodes for high-K gate applications
- L.F. Edge
- T. Vo
- et al.
- 2009
- ECS Meeting 2009
High-K gate dielectric structures by atomic layer deposition for the 32nm and beyond nodes
- R.D. Clark
- S. Consiglio
- et al.
- 2008
- ECS Meeting 2008
Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008
Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb-15 at. % Ge
- C. Cabral
- L. Krusin-Elbaum
- et al.
- 2008
- Applied Physics Letters
Backscattered electron imaging in the scanning electron microscope: The use of either: (A) high incident energy or (b) an array detector
- L. Gignac
- O.C. Wells
- et al.
- 2008
- Microscopy and Microanalysis