Evolution of sn environment in algaas alloys
- J. Pant
- K. Pansewicz
- et al.
- 1993
- Japanese Journal of Applied Physics
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45 results for Thomas N. Theis
Lattice strain from DX centers and persistent photocarriers in Sn-doped and Si-doped Ga1-xAlxAs
- G.S. Cargill III
- A. Segmüller
- et al.
- 1992
- Physical Review B
Scaling magnetoresistance induced by superconducting contacts in n-type GaAs
- R.G. Mani
- L. Ghenim
- et al.
- 1992
- Physical Review B
Effect of local alloy disorder on the emission kinetics of deep donors (DX centers) in AlxGa1-xAs
- P.M. Mooney
- T.N. Theis
- et al.
- 1991
- Journal of Electronic Materials
Bistability of the DX center in GaAs and AlxGa1-xAs, and experimental tests for negative U of the DX level
- T.N. Theis
- P.M. Mooney
- et al.
- 1991
- Journal of Electronic Materials
Exponential thermal emission transients from DX centers in heavily Si-doped GaAs
- E. Calleja
- P.M. Mooney
- et al.
- 1990
- Applied Physics Letters
Noise spectroscopy of deep level (DX) centers in GaAs-AlxGa 1-xAs heterostructures
- J.R. Kirtley
- T.N. Theis
- et al.
- 1988
- Journal of Applied Physics
Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1-xAs of low Al content
- P.M. Mooney
- T.N. Theis
- et al.
- 1988
- Applied Physics Letters
Charge trapping in n-AlxGa1-xAs "insulators" and related device instabilities
- T.N. Theis
- B.D. Parker
- 1987
- Applied Surface Science
Hot-electron capture to DX centers in AlxGa1-xAs at low Al mole fractions (x<0.2)
- T.N. Theis
- B.D. Parker
- et al.
- 1986
- Applied Physics Letters