Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990
Publications
Date
Featured collections
Popular topics
76 results for John D. Cressler
50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base Profiles
- James Warnock
- John D. Cressler
- et al.
- 1990
- IEEE Electron Device Letters
Silicon bipolar transistor: a viable candidate for high speed applications at liquid nitrogen temperature
- John D. Cressler
- 1990
- Cryogenics
Scaling The Silicon Bipolar Transistor For Sub-100-Ps Ecl Circuit Operation At Liquid Nitrogen Temperature
- John D. Cressler
- Tze-Chiang Chen
- et al.
- 1990
- IEEE T-ED
Sub-100 pS silicon bipolar ECL circuit operation at liquid nitrogen temperatures
- J.D. Cressler
- T.C. Chen
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
Low-temperature operation of silicon bipolar ECL circuits
- J.D. Cressler
- D.D. Tang
- et al.
- 1989
- ISSCC 1989
Effects of injection induced bandgap narrowing on bipolar transistors operating at low temperatures
- J.D. Cressler
- D.D. Tang
- et al.
- 1989
- Workshop on Low Temperature Semiconductor Electronics 1989
A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989
Injection-Induced Bandgap Narrowing and Its Effects on the Low-Temperature Operation of Silicon Bipolar Transistors
- John D. Cressler
- Denny Duan-Lee Tang
- et al.
- 1989
- IEEE T-ED