Si/SiGe Epitaxial-Base Transistors—Part II: Process Integration and Analog Applications
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
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76 results for John D. Cressler
Si/SiGe Epitaxial-Base Transistors—Part I: Materials, Physics, and Circuits
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
AC-coupled complementary push-pull ECL circuit with 34 fJ power-delay product
- C.T. Chuang
- J.D. Cressler
- et al.
- 1993
- Electronics Letters
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- John D. Cressler
- James H. Comfort
- et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Transactions on Electron Devices
Fabrication of Tungsten Local Interconnect for VLSI Bipolar Technology
- N.J. Mazzeo
- J.D. Warnock
- et al.
- 1993
- JES
SiGe-base bipolar transistors for cryogenic BiCMOS applications
- John D. Cressler
- 1992
- Microelectronic Engineering
Device design issues for a high-performance technology with Si or SiGe epitaxial base
- J.N. Burghartz
- J.D. Cressler
- et al.
- 1991
- Microelectronic Engineering
Submicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar Transistors
- T.C. Chen
- E. Ganin
- et al.
- 1991
- IEEE T-ED
Electron-Beam Damage of Self-Aligned Silicon Bipolar Transistors and Circuits
- Keith A. Jenkins
- John D. Cressler
- 1991
- IEEE T-ED