Strained Si1-xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyondPouya HashemiKarthik Balakrishnanet al.2014VLSI Technology 2014
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensionsP. HashemiM. Kobayashiet al.2013VLSI Circuits 2013
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensionsP. HashemiM. Kobayashiet al.2013VLSI Technology 2013