Investigation of fixed oxide charge and fin profile effects on bulk FinFET device characteristics
- Bomsoo Kim
- Dong-Il Bae
- et al.
- 2013
- IEEE Electron Device Letters
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6 results for Andreas Scholze
Modeling of gate-induced drain leakage mechanisms in silicon-germanium channel pFET
- Vishal A. Tiwari
- Andreas Scholze
- et al.
- 2014
- ICEE 2014
Silicon germanium FinFET device physics, process integration and modeling considerations (invited)
- Darsen Lu
- Pierre Morin
- et al.
- 2014
- ECSSMEQ 2014
10nm FINFET technology for low power and high performance applications
- D. Guo
- H. Shang
- et al.
- 2014
- ICSICT 2014
Exploring MOL design options for a 20nm CMOS technology using TCAD
- Andreas Scholze
- Stephen Furkay
- et al.
- 2011
- SISPAD 2011
Modeling gate-pitch scaling impact on stress-induced mobility and external resistance for 20nm-node MOSFETs
- Seong-Dong Kim
- Sameer Jain
- et al.
- 2010
- SISPAD 2010