Corner effect and local volume inversion in SiNW FETs
- Luca De Michielis
- Kirsten Emilie Moselund
- et al.
- 2011
- IEEE TNANO
Publications
Date
Featured collections
Popular topics
28 results for Adrian M. Ionescu
A simulation-based study of sensitivity to parameter fluctuations of silicon tunnel FETs
- Kathy Boucart
- Adrian M. Ionescu
- et al.
- 2010
- ESSDERC 2010
Asymmetrically strained all-silicon multi-gate n-Tunnel FETs
- M. Najmzadeh
- K. Boucart
- et al.
- 2010
- Solid-State Electronics
The high-mobility bended n-channel silicon nanowire transistor
- Kirsten Emilie Moselund
- Mohammad Najmzadeh
- et al.
- 2010
- IEEE T-ED
Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation
- Kathy Boucart
- Adrian M. Ionescu
- et al.
- 2009
- ESSDERC 2009
Lateral strain profile as key technology booster for all-silicon tunnel FETs
- Kathy Boucart
- Adrian Mihai Ionescu
- et al.
- 2009
- IEEE Electron Device Letters
Fabrication and characterization of gate-all-around silicon nanowires on bulk silicon
- Vincent Pott
- Kirsten Emilie Moselund
- et al.
- 2008
- IEEE TNANO
Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters
- Dimitrios Tsamados
- Yogesh Singh Chauhan
- et al.
- 2008
- Solid-State Electronics