Optimization of porous ultra low- dielectrics (κ≤ 2.55) for 28nm generation
- D. Kioussis
- E.T. Ryan
- et al.
- 2011
- IITC/MAM 2011
Publications
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71 results for Griselda Bonilla
Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes
- F. Chen
- Michael Shinosky
- et al.
- 2011
- IRPS 2011
Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010
Effect of impurity on Cu electromigration
- C.-K. Hu
- Matthew Angyal
- et al.
- 2010
- International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
Processing and moisture effects on TDDB for Cu/ULK BEOL structures
- Eric G. Liniger
- T.M. Shaw
- et al.
- 2010
- ADMETA 2010
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
Copper microstructure: Effect on electromigration void evolution
- C. Witt
- V. Calero
- et al.
- 2010
- ADMETA 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
Ultrathin (5-35 nm) SiCNH dielectrics for damascene Cu Cap application: Thickness scaling and oxidation barrier performance limitation
- Son Nguyen
- T. Haigh Jr.
- et al.
- 2010
- ECS Meeting 2010
Stress relaxation in Cu thin films
- C. Witt
- R. Rosenberg
- et al.
- 2008
- International Workshop on Stress-Induced Phenomena in Metallization 2008