Copper-to-dielectric heterogeneous bonding for 3D integration
- Wei Lin
- Juntao Li
- et al.
- 2014
- LTB-3D 2014
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64 results for J. Demarest
Electrodeposited Cu film morphology on thin PVD Cu seed layers
- James Kelly
- X. Lin
- et al.
- 2013
- JES
Perspectives into CVD-cobalt liner induced increase in resistivity of Cu interconnect
- Wei Lin
- Xunyuan Zhang
- et al.
- 2013
- ADMETA 2013
Electrodeposited Cu film morphology on thin PVD Cu seed layers
- James J. Kelly
- X. Lin
- et al.
- 2013
- ECS Transactions
Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- James J. Kelly
- Takeshi Nogami
- et al.
- 2011
- ECS Meeting 2011
56 nm pitch copper dual-damascene interconnects with triple pitch split metal and double pitch split via
- James Hsueh-Chung Chen
- Christopher Waskiewicz
- et al.
- 2012
- IITC 2012
Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing
- Hiroshi Itokawa
- Nathaniel C. Beriiner
- et al.
- 2012
- IWJT 2012
Synergistic combinations of dielectrics and metallization process technology to achieve 22 nm interconnect performance targets
- G.A. Antonelli
- G. Jiang
- et al.
- 2012
- Microelectronic Engineering
Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- J. Kelly
- Takeshi Nogami
- et al.
- 2012
- JES
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011