Interactions of metal-organic PEALD TaN with ultra-low k dielectric materials
- O. Van Der Straten
- H. Shobha
- et al.
- 2010
- ECS Transactions
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63 results for J. Demarest
The effect of a threshold failure time and bimodal behavior on the electromigration lifetime of copper interconnects
- R. Filippi
- P.-C. Wang
- et al.
- 2009
- IRPS 2009
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
A SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applications
- Matthew Angyal
- Jason Gill
- et al.
- 2005
- AMC 2005
Stress migration reliability of copper interconnect stacked via structures with adjacent copper plates in low k- dielectrics
- D. Nguyen
- Kaushik Chanda
- et al.
- 2005
- VMIC 2005
Electromigration in sub-micron Cu interconnects in low k dielectrics
- B.N. Agarwala
- D. Nguyen
- et al.
- 2005
- ECS Meeting 2005
Electrical and reliability evaluation of Cu/Low-k integration: Exploration of PVD barrier/seed and CVD SiC(N,H) cap depositions
- C.-C. Yang
- D. Edelstein
- et al.
- 2004
- ADMETA 2004
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
- D. Edelstein
- C.R. Davis
- et al.
- 2004
- IITC 2004
Chip-to-Package Interaction for a 90 nm Cu / PECVD Low-k technology
- W. Landers
- D. Edelstein
- et al.
- 2004
- IITC 2004