Synergistic combinations of dielectrics and metallization process technology to achieve 22 nm interconnect performance targets
- G.A. Antonelli
- G. Jiang
- et al.
- 2012
- Microelectronic Engineering
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Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- J. Kelly
- Takeshi Nogami
- et al.
- 2012
- JES
Comparison of electromigration in Cu interconnects with atomic-layer- or physical-vapor-deposited TaN liners
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- JES