Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires
- C. K. Hu
- James Kelly
- et al.
- 2017
- IITC 2017
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23 results for Raghuveer Patlolla
Methods to lower the resistivity of ruthenium interconnects at 7 nm node and beyond
- Xunyuan Zhang
- Huai Huang
- et al.
- 2017
- IITC 2017
Comprehensive analysis of line-edge and line-width roughness for EUV lithography
- Ravi Bonam
- Chi Chun Liu
- et al.
- 2017
- SPIE Advanced Lithography 2017
An OCD perspective of line edge and line width roughness metrology
- Ravi Bonam
- R. Muthinti
- et al.
- 2017
- SPIE Advanced Lithography 2017
CMP Challenges for Advanced Technology Nodes
- John H Zhang
- Haigou Huang
- et al.
- 2017
- MRS Advances
Experimental study of nanoscale Co damascene BEOL interconnect structures
- James Kelly
- James H.-C. Chen
- et al.
- 2016
- IITC/AMC 2016
Ruthenium interconnect resistivity and reliability at 48 nm pitch
- Xunyuan Zhang
- Huai Huang
- et al.
- 2016
- IITC/AMC 2016
BEOL process integration for the 7 nm technology node
- T. Standaert
- Genevieve Beique
- et al.
- 2016
- IITC/AMC 2016
Tungsten and cobalt metallization: A material study for MOL local interconnects
- Vimal Kamineni
- Mark Raymond
- et al.
- 2016
- IITC/AMC 2016
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
- Takeshi Nogami
- Benjamin D. Briggs
- et al.
- 2015
- IEDM 2015