Ru Liner Scaling with ALD TaN Barrier Process for Low Resistance 7 nm Cu Interconnects and beyond
- Koichi Motoyama
- O. Van Der Straten
- et al.
- 2018
- IITC 2018
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33 results for O. Van Der Straten
Experimental study of PVD Cu/CVD Co bilayer dissolution for BEOL Cu interconnect applications
- X. Sun
- B. Peethala
- et al.
- 2017
- ECS Meeting 2017
BEOL process integration for the 7 nm technology node
- T. Standaert
- Genevieve Beique
- et al.
- 2016
- IITC/AMC 2016
ALD and PVD tantalum nitride barrier resistivity and their significance in via resistance trends
- O. Van Der Straten
- X. Zhang
- et al.
- 2014
- ECSSMEQ 2014
PVD Cu reflow seed process optimization for defect reduction in nanoscale Cu/Low-k dual damascene interconnects
- K. Motoyama
- O. Van Der Straten
- et al.
- 2013
- JES
Electrodeposited Cu film morphology on thin PVD Cu seed layers
- James Kelly
- X. Lin
- et al.
- 2013
- JES
Electrical properties and reliability of ALD TaN barrier for sub-90nmPitch Cu interconnects
- Tibor Bolom
- J. Lee
- et al.
- 2013
- ADMETA 2013
Electrodeposited Cu film morphology on thin PVD Cu seed layers
- James J. Kelly
- X. Lin
- et al.
- 2013
- ECS Transactions
X-ray characterization of PEALD versus PVD tantalum nitride barrier deposition and the impact on via contact resistance
- Xunyuan Zhang
- Oscar Van der Straten
- et al.
- 2013
- ECS Transactions
Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- James J. Kelly
- Takeshi Nogami
- et al.
- 2011
- ECS Meeting 2011