Electrical enhancement and higher-k engineering in ultra-thin atomic layer deposited Hf1-xAlxOy films
- K. Tapily
- S. Consiglio
- et al.
- 2014
- ECS J. Solid State Sci. Technol.
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14 results for Alain C. Diebold
Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
- Steven Consiglio
- Kandabara Tapily
- et al.
- 2014
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf 1-xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme
- Relja Vasić
- Steven Consiglio
- et al.
- 2013
- Journal of Applied Physics
Effects of stress on the dielectric function of strained pseudomorphic Si 1-xGe x alloys from 0 to 75 Ge grown on Si (001)
- Gangadhara Raja Muthinti
- Manasa Medikonda
- et al.
- 2012
- Journal of Applied Physics