Double spin-torque magnetic tunnel junction devices for last-level cache applications
- G. Hu
- C. Safranski
- et al.
- 2022
- IEDM 2022
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9 results for M. G. Gottwald
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions
- C. Safranski
- G. Hu
- et al.
- 2022
- VLSI Technology and Circuits 2022
Demonstration of narrow switching distributions in STT-MRAM arrays for LLC applications at 1x nm node
- E. R.J. Edwards
- Guohan Hu
- et al.
- 2020
- IEDM 2020
Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications
- Guohan Hu
- D. Kim
- et al.
- 2019
- IEDM 2019
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- Guohan Hu
- M. G. Gottwald
- et al.
- 2017
- IEDM 2017
STT-MRAM - Status and Outlook
- Daniel C. Worledge
- C. Safranski
- et al.
- 2022
- TMRC 2022
Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
- Christopher Safranski
- Guohan Hu
- et al.
- 2021
- IEEE T-ED
Reliable 5 ns writing of spin-transfer torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2019
- IEEE Magnetics Letters
Co/Ni multilayers for spintronics: High spin polarization and tunable magnetic anisotropy
- S. Andrieu
- T. Hauet
- et al.
- 2018
- Physical Review Materials