A 26 ps self-aligned epitaxial silicon base bipolar technology
- J.H. Comfort
- P.F. Lu
- et al.
- 1990
- VLSI Technology 1990
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53 results for Tze-Chiang Chen
Sub-100 pS silicon bipolar ECL circuit operation at liquid nitrogen temperatures
- J.D. Cressler
- T.C. Chen
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989
Boron-doped emitters for high-performance vertical pnp transistors
- J. Warnock
- P.F. Lu
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
Selective epitaxy base for bipolar transistors
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- ESSDERC 1988
On the Temperature Dependence of Majority Carrier Transport in Heavily Arsenic-Doped Polycrystalline Silicon Thin Films
- John D. Cressler
- Wei Hwang
- et al.
- 2019
- JES
Nanoscale chemical templating of Si nanowires seeded with Al
- Maha M. Khayyat
- Brent A. Wacaser
- et al.
- 2013
- Nanotechnology
Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p + a-SiC:H/transparent conducting oxide interface
- Jeehwan Kim
- Ahmed I. Abou-Kandil
- et al.
- 2011
- Applied Physics Letters
Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2007
- Microelectronic Engineering
Thickness measurement of ultra-thin gate dielectrics under inversion condition
- W. Zhu
- Mukesh Khare
- et al.
- 2001
- International Symposium on VLSI Technology, Systems, and Applications, Proceedings