Investigation of fixed oxide charge and fin profile effects on bulk FinFET device characteristics
- Bomsoo Kim
- Dong-Il Bae
- et al.
- 2013
- IEEE Electron Device Letters
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Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
- K. Cheng
- S.-C. Seo
- et al.
- 2014
- VLSI Technology 2014