The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells
- J.L.M. Oosthoek
- D. Krebs
- et al.
- 2012
- Journal of Applied Physics
Publications
Date
Featured collections
Popular topics
18 results for Martin Salinga
Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials
- Daniel Krebs
- Rüdiger M. Schmidt
- et al.
- 2012
- Journal of Non-Crystalline Solids
Characterization of phase change memory materials using phase change bridge devices
- Daniel Krebs
- Simone Raoux
- et al.
- 2009
- Journal of Applied Physics
Threshold field of phase change memory materials measured using phase change bridge devices
- Daniel Krebs
- Simone Raoux
- et al.
- 2009
- Applied Physics Letters
Phase transitions in Ge-Sb phase change materials
- Simone Raoux
- Cyril Cabral
- et al.
- 2009
- Journal of Applied Physics
Phase change materials and their application to random access memory technology
- Simone Raoux
- Robert M. Shelby
- et al.
- 2008
- Microelectronic Engineering
Phase-change random access memory: A scalable technology
- Simone Raoux
- Geoffrey W. Burr
- et al.
- 2008
- IBM J. Res. Dev
Effect of Al and Cu doping on the crystallization properties of the phase change materials SbTe and GeSb
- Simone Raoux
- Martin Salinga
- et al.
- 2007
- Journal of Applied Physics