Integration of GaAs on Ge/Si towers by MOVPE
- A.G. Taboada
- T. Kreiliger
- et al.
- 2013
- MRS Spring Meeting 2013
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8 results for H. Von Känel
Tersoff et al. Reply: Comparison of Continuum and Step Models for SiGe Islands
- J. Tersoff
- B.J. Spencer
- et al.
- 2003
- Physical Review Letters
Barrierless Formation and Faceting of SiGe Islands on Si(001)
- J. Tersoff
- B.J. Spencer
- et al.
- 2002
- Physical Review Letters
Heterointegration by molecular beam epitaxy: (In, Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
- M. Richter
- Emanuele Uccelli
- et al.
- 2013
- Journal of Crystal Growth
Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping
- G. Katsaros
- A. Rastelli
- et al.
- 2006
- Applied Physics Letters
Reading the footprints of strained islands
- A. Rastelli
- M. Stoffel
- et al.
- 2006
- Microelectronics Journal
Investigating the lateral motion of SiGe islands by selective chemical etching
- G. Katsaros
- A. Rastelli
- et al.
- 2006
- Surface Science
Prepyramid-to-pyramid transition of SiGe islands on Si(001)
- A. Rastelli
- H. Von Känel
- et al.
- 2003
- Physical Review B - CMMP