Integration of GaAs on Ge/Si towers by MOVPE
- A.G. Taboada
- T. Kreiliger
- et al.
- 2013
- MRS Spring Meeting 2013
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5 results for A. Dommann
Properties of Zn implanted GaN
- S. Strite
- P.W. Epperlein
- et al.
- 1995
- MRS Fall Meeting 1995
Properties of InGaN deposited on glass at low temperature
- Tilman Beierlein
- S. Strite
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
- A. Pelzmann
- S. Strite
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
Heterointegration by molecular beam epitaxy: (In, Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
- M. Richter
- Emanuele Uccelli
- et al.
- 2013
- Journal of Crystal Growth