Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel
- Shogo Mochizuki
- M. Bhuiyan
- et al.
- 2020
- IEDM 2020
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A new technique for evaluating stacked nanosheet inner spacer TDDB reliability
- Tian Shen
- K. Watanabe
- et al.
- 2020
- IRPS 2020