A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
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178 results for Wilfried Haensch
Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond
- Chung-Hsun Lin
- Wilfried Haensch
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Understanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-κ / metal-gate pFETs
- Hiroshi Miki
- M. Yamaoka
- et al.
- 2011
- VLSI Technology 2011
On the high-field transport and its temperature dependence in deca-nanometer fully depleted silicon-on-insulator field-effect-transistor
- Masaharu Kobayashi
- Jin Cai
- et al.
- 2011
- Applied Physics Letters
High-frequency graphene voltage amplifier
- Shu-Jen Han
- Keith A. Jenkins
- et al.
- 2011
- Nano Letters
Effects of nanoscale contacts to graphene
- Aaron D. Franklin
- Shu-Jen Han
- et al.
- 2011
- IEEE Electron Device Letters
FDSOI radiation dosimeters
- Jeng-Bang Yau
- Michael S. Gordon
- et al.
- 2011
- VLSI-TSA 2011
Impact of HK / MG stacks and future device scaling on RTN
- Naoki Tega
- Hiroshi Miki
- et al.
- 2011
- IRPS 2011
Large-scale graphene transistors with enhanced performance and reliability based on interface engineering by phenylsilane self-assembled monolayers
- Zihong Liu
- Ageeth A. Bol
- et al.
- 2011
- Nano Letters