A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
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Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices
- S. Lee
- Richard A. Wachnik
- et al.
- 2013
- VLSI Technology 2013