A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
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3 results for Nauman Z. Butt
Scaling deep trench based eDRAM on SOI to 32nm and beyond
- G. Wang
- D. Anand
- et al.
- 2009
- IEDM 2009
Modeling and analysis of transistor mismatch due to variability in short-channel effect induced by random dopant fluctuation
- Nauman Z. Butt
- Jeffrey B. Johnson
- 2012
- IEEE Electron Device Letters