Physical mechanism of threshold voltage modulation by ge channel ion implantation in the TiN/HfO2 gate stack systems
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2011
- Japanese Journal of Applied Physics
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16 results for Ryosuke Iijima
Characteristics of La2O3-and Al2O 3-capped HfO2 dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- Japanese Journal of Applied Physics
Gate capacitance reduction due to the inversion layer in high-k/metal gate stacks within a subnanometer EOT regime
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- IEEE T-ED
Materials and electrical characterization of physical vapor deposited Lax Lu1-x Oinf3 thin films on 300 mm silicon
- L.F. Edge
- T. Vo
- et al.
- 2011
- Applied Physics Letters
Characterization of inversion-layer capacitance of electrons in high-k/metal gate stacks
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2010
- IEEE T-ED
Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes
- Changhwan Choi
- Takashi Ando
- et al.
- 2009
- Microelectronic Engineering