Characteristics of La2O3-and Al2O 3-capped HfO2 dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- Japanese Journal of Applied Physics
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23 results for Mariko Takayanagi
Gate capacitance reduction due to the inversion layer in high-k/metal gate stacks within a subnanometer EOT regime
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- IEEE T-ED
Characterization of inversion-layer capacitance of electrons in high-k/metal gate stacks
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2010
- IEEE T-ED