Reactive Ion Etching of Sige Alloys using Fluorine-Containing Plasmas *
- James W. Corbett
- Gottlieb S. Oehrlein
- et al.
- 1993
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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118 results for Gottlieb S. Oehrlein
Effects of ion bombardment in plasma etching on the fluorinated silicon surface layer: Real-time and postplasma surface studies
- Gottlieb S. Oehrlein
- 1993
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Selective reactive ion etching of phosphorus-doped oxide over undoped SiO2
- David Vender
- Gottlieb S. Oehrlein
- et al.
- 1993
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
High-Resolution Depth Profiling of Ultrathin Silicon Oxide/Nitride/Oxide Layers
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1993
- JES
Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1992
- Applied Physics Letters
Reactive ion etching of SiGe alloys using CF2Cl2
- Ying Zhang
- Gottlieb S. Oehrlein
- et al.
- 1992
- Journal of Applied Physics
Noninvasive picosecond ultrasonic detection of ultrathin interfacial layers: CFx at the Al/Si interface
- G. Tas
- R.J. Stoner
- et al.
- 1992
- Applied Physics Letters
Etching of silicon in low-pressure plasmas containing fluorine and oxygen: A comparison of real-time and postplasma surface studies
- Gottlieb S. Oehrlein
- Gerrit M.W. Kroesen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Ellipsometric study of silicon surface damage in electron cyclotron resonance plasma etching using CF4 and SF6
- M. Haverlag
- D. Vender
- et al.
- 1992
- Applied Physics Letters
Ion-induced fluorination in electron cyclotron resonance etching of silicon studied by x-ray photoelectron spectroscopy
- David Vender
- Marco Haverlag
- et al.
- 1992
- Applied Physics Letters