Surface processes in CF4/O2 reactive etching of silicon
- Gottlieb S. Oehrlein
- Steve W. Robey
- et al.
- 1988
- Applied Physics Letters
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118 results for Gottlieb S. Oehrlein
Capacitance-voltage properties of thin Ta2O5 films on silicon
- Gottlieb S. Oehrlein
- 1988
- Thin Solid Films
Hydrogen plasma induced defects in silicon
- S.-J. Jeng
- G.S. Oehrlein
- et al.
- 1988
- Applied Physics Letters
Valence-band photoemission and electron energy-loss studies of reactive ion etched silicon dioxide
- S.W. Robey
- G.S. Oehrlein
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Medium energy ion scattering analysis of reactive ion etched Si(001) surfaces
- M. Copel
- R.M. Tromp
- et al.
- 1988
- Applied Physics Letters
Transient fluorocarbon film thickness effects near the silicon dioxide/silicon interface in selective silicon dioxide reactive ion etching
- Mark A. Jaso
- Gottlieb S. Oehrlein
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
X-ray photoemission spectroscopy characterization of silicon surfaces after CF4/H2magnetron ion etching: Comparisons to reactive ion etching
- Gottlieb S. Oehrlein
- Arthur A. Bright
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Microstructural studies of reactive ion etched silicon
- S.-J. Jeng
- G.S. Oehrlein
- 1987
- Applied Physics Letters
Structure of the boron-hydrogen complex in crystalline silicon
- A.D. Marwick
- G.S. Oehrlein
- et al.
- 1987
- Physical Review B
Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanisms
- Gottiieb S. Oehrlein
- Young H. Lee
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films