Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
- J. Zhang
- S. Pancharatnam
- et al.
- 2019
- IEDM 2019
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8 results for Dexin Kong
Resistive Memory Process Optimization for High Resistance Switching Toward Scalable Analog Compute Technology for Deep Learning
- Youngseok Kim
- Soon-Cheon Seo
- et al.
- 2021
- IEEE Electron Device Letters
Process-Induced ReRAM Performance Improvement of Atomic Layer Deposited HfO2 for Analog In-Memory Computing Applications
- Steven Consiglio
- H. Higuchi
- et al.
- 2021
- IMCS 2021
Introduction to Analog Testing of Resistive Random Access Memory (RRAM) Devices towards Scalable Analog Compute Technology for Deep Learning
- Ruturaj Pujari
- Arthur Gasasira
- et al.
- 2021
- ASMC 2021
Bottom electrode properties and electrical field cycling effects on hfox based resistive switching memory device
- J. Li
- Youngseok Kim
- et al.
- 2020
- ISTFA 2020
Development of SiGe Indentation Process Control to Enable Stacked Nanosheet FET Technology
- Dexin Kong
- Daniel Schmidt
- et al.
- 2020
- ASMC 2020
AFM characterization for Gate-All-Around (GAA) devices
- Mary Breton
- Jennifer Fullam
- et al.
- 2020
- SPIE Advanced Lithography 2020
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017