A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technologyNauman Z. ButtKevin McStayet al.2010IEDM 2010
Performance analysis and modeling of deep trench decoupling capacitor for 32 nm high-performance SOI processors and beyondBalaji JayaramanSneha Guptaet al.2012ICICDT 2012
Characterization of novel TiN/HfO2 metal insulator semiconductor stack for 32nm eDRAMPuneet GoyalSneha Guptaet al.2010IEEE International SOI Conference 2010