Sb-heterostructure millimeter-wave detectors with reduced capacitance and noise equivalent power
- N. Su
- R. Rajavel
- et al.
- 2008
- IEEE Electron Device Letters
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9 results for P. Fay
DC and RF performance of 0.25 μm p-type SiGe MODFET
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
High speed p-type SiGe modulation-doped field-effect transistors
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
Self-aligned In0.53Ga0.47As/InAs/InP vertical tunnel FETs
- Guangle Zhou
- Y. Lu
- et al.
- 2011
- CS MANTECH 2011
Geometry dependent tunnel FET performance - Dilemma of electrostatics vs. quantum confinement
- Yeqing Lu
- Alan C. Seabaugh
- et al.
- 2010
- DRC 2010
Sb-heterostructure backward diode detectors with ultrathin tunnel barriers
- Z. Zhang
- Ning Su
- et al.
- 2009
- DRC 2009
Scaling of high-performance InAs/AlSb/GaSb heterostructure detectors for millimeter-wave and submillimeter-wave sensing and imaging
- Ning Su
- Z. Zhang
- et al.
- 2008
- DRC 2008
Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers
- Patrick Fay
- Mohamed Arafa
- et al.
- 1997
- Journal of Lightwave Technology
High-transconductance p-type SiGe modulation-doped field-effect transistor
- M. Arafa
- P. Fay
- et al.
- 1995
- Electronics Letters