Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 2000
- IEEE Electron Device Letters
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148 results for Jack O. Chu
p-Type SiGe transistors with low gate leakage using SiN gate dielectric
- W. Lu
- X.W. Wang
- et al.
- 1999
- IEEE Electron Device Letters
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
- Suraj J. Mathew
- Guofu Niu
- et al.
- 1999
- IEEE Electron Device Letters
Integrated enhancement- and depletion-mode FET's in modulation-doped Si/SiGe heterostructures
- K. Ismail
- J.O. Chu
- et al.
- 1997
- IEEE Electron Device Letters
Operation of a novel negative differential conductance transistor fabricated in a strained Si quantum well
- S.J. Koester
- K. Ismail
- et al.
- 1997
- IEEE Electron Device Letters
A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET
- M. Arafa
- K. Ismail
- et al.
- 1996
- IEEE Electron Device Letters
DC and RF performance of 0.25 μm p-type SiGe MODFET
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
High speed p-type SiGe modulation-doped field-effect transistors
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures
- K. Ismail
- F. Legoues
- et al.
- 1994
- Physical Review Letters
SiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing
- P.W. Li
- E.S. Yang
- et al.
- 1994
- IEEE Electron Device Letters