Effect of Al2O3/InGaAs interface on channel mobility
- L. Yang
- C.-W. Cheng
- et al.
- 2011
- ECS Meeting 2011
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High mobility In 0.53Ga 0.47As quantum-well metal oxide semiconductor field effect transistor structures
- Li Yang
- Cheng-Wei Cheng
- et al.
- 2012
- Journal of Applied Physics