SiGe HBT Power Amplifier design using 0.35 μm BiCMOS technology with through-silicon-via
- Jingyang Zhang
- Dawn Wang
- et al.
- 2011
- ASICON 2011
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3D integration techniques applied to SiGe power amplifiers
- Ramana Malladi
- Alvin Joseph
- et al.
- 2008
- ECS Meeting 2008