Mechanism of VFB / VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices
- Tackhwi Lee
- Kisik Choi
- et al.
- 2011
- Journal of Vacuum Science and Technology B
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Reduced gate-leakage current and charge trapping characteristics of dysprosium-incorporated HfO2 gate-oxide n-MOS devices
- Tackhwi Lee
- Sanjay K. Banerjee
- 2011
- IEEE T-ED