Demonstration of a high performance 40-nm-gate carbon nanotube field-effect transistor
- Y.-M. Lin
- J. Appenzeller
- et al.
- 2005
- DRC 2005
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91 results for Joerg Appenzeller
Impact of the nanotube diameter on the performance of CNFETs
- Zhihong Chen
- Joerg Appenzeller
- et al.
- 2005
- DRC 2005
High-performance dual-gate carbon nanotube FETs with 40-nm gate length
- Yu-Ming Lin
- Joerg Appenzeller
- et al.
- 2005
- IEEE Electron Device Letters
Quantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors
- K.M. Indlekofer
- J. Knoch
- et al.
- 2005
- Physical Review B - CMMP
High-performance carbon nanotube field-effect transistor with tunable polarities
- Yu-Ming Lin
- Joerg Appenzeller
- et al.
- 2005
- IEEE TNANO
The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors
- Zhihong Chen
- Joerg Appenzeller
- et al.
- 2005
- Nano Letters
Direct measurements of frequency response of carbon nanotube field effect transistors
- D. Singh
- Keith A. Jenkins
- et al.
- 2005
- Electronics Letters
Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
- J. Knoch
- S. Mantl
- et al.
- 2005
- Solid-State Electronics
AC and DC characteristics of carbon nanotube field-effect transistors
- J. Appenzeller
- 2004
- BCTM 2004
An extended model for carbon nanotube field-effect transistors
- J. Knoch
- S. Mantl
- et al.
- 2004
- DRC 2004