pFET V t control with HfO 2/TiN/poly-Si gate stack using a lateral oxygenation process
- B. Cartier
- M. Steen
- et al.
- 2009
- VLSI Technology 2009
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72 results for Alessandro Callegari
Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
- K. Choi
- H. Jagannathan
- et al.
- 2009
- VLSI Technology 2009
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
- Yanning Sun
- S.J. Koester
- et al.
- 2007
- CS MANTECH 2007
Materials and process integration issues in metal gate/high-k stacks and their dependence on device performance
- A.C. Callegari
- K. Babich
- et al.
- 2007
- ECS Meeting 2007
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
A comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gates
- S. Zafar
- Y.-H. Kim
- et al.
- 2006
- VLSI Technology 2006
Thermal stability of HfN compounds on HfO2/SiO2 gate stacks
- A.C. Callegari
- M. Gribelyuk
- et al.
- 2006
- ECS Meeting 2006
HfO 2/metal stacks: Determination of energy level diagram, work functions & their dependence on metal deposition
- S. Zafar
- V. Narayanan
- et al.
- 2005
- VLSI Technology 2005
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
Electron mobility dependence of W/HFO 2 gate stacks on interfacial layer preparation
- A.C. Callegari
- P. Jamison
- et al.
- 2005
- ECS Meeting 2005