Sub-40 nm SOI V-groove n-MOSFETs
- Joerg Appenzeller
- R. Martel
- et al.
- 2002
- IEEE Electron Device Letters
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55 results for J. Knoch
VLS-grown silicon nanowires - Dopant deactivation and tunnel FETs
- Mikael T. Björk
- K. Moselund
- et al.
- 2010
- SNW 2010
Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs
- H. Ghoneim
- J. Knoch
- et al.
- 2009
- ULIS 2009
Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration
- C. Sandow
- J. Knoch
- et al.
- 2008
- DRC 2008
Variability in SOI Schottky barrier MOSFETs
- S.F. Feste
- M. Zhang
- et al.
- 2008
- ULIS 2008
Impact ionization FETs based on silicon nanowires
- M.T. Björk
- O. Hayden
- et al.
- 2007
- DRC 2007
THz probe for nanowire FETs: Simulation of few-electron fingerprints
- Klaus Michael Indlekofer
- Radoslav Németh
- et al.
- 2007
- DRC 2007
Impact of the nanotube diameter on the performance of CNFETs
- Zhihong Chen
- Joerg Appenzeller
- et al.
- 2005
- DRC 2005
A novel concept for field-effect transistors - The tunneling carbon nanotube FET
- J. Knoch
- J. Appenzeller
- 2005
- DRC 2005
An extended model for carbon nanotube field-effect transistors
- J. Knoch
- S. Mantl
- et al.
- 2004
- DRC 2004