Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings
- F. Lanzerath
- D. Buca
- et al.
- 2008
- Journal of Applied Physics
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55 results for J. Knoch
Variability in SOI Schottky barrier MOSFETs
- S.F. Feste
- M. Zhang
- et al.
- 2008
- ULIS 2008
Silicon nanowire tunneling field-effect transistors
- M.T. Björk
- J. Knoch
- et al.
- 2008
- Applied Physics Letters
Tunneling phenomena in carbon nanotube field-effect transistors
- Joachim Knoch
- Joerg Appenzeller
- 2008
- Physica Status Solidi (A) Applications and Materials Science
Outperforming the conventional scaling rules in the quantum-capacitance limit
- J. Knoch
- W. Riess
- et al.
- 2008
- IEEE Electron Device Letters
Many-body approach to the terahertz response of Wigner molecules in gated nanowire structures
- K.M. Indlekofer
- R. Németh
- et al.
- 2008
- Physical Review B - CMMP
Threshold voltage variation in SOI Schottky-barrier MOSFETs
- Min Zhang
- Joachim Knoch
- et al.
- 2008
- IEEE Transactions on Electron Devices
Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane
- H. Schmid
- M.T. Björk
- et al.
- 2008
- Journal of Applied Physics
THz probe for nanowire FETs: Simulation of few-electron fingerprints
- Klaus Michael Indlekofer
- Radoslav Németh
- et al.
- 2007
- DRC 2007
Impact ionization FETs based on silicon nanowires
- M.T. Björk
- O. Hayden
- et al.
- 2007
- DRC 2007