Surface potential and morphology issues of annealed (HfO 2) x(SiO 2) 1-x gate oxides
- R. Ludeke
- P. Lysaght
- et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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Origin of the flatband-voltage roll-off phenomenon in metal/high-k gate stacks
- Gennadi Bersuker
- Chang Seo Park
- et al.
- 2010
- IEEE T-ED