The Effects of Pressure, Temperature, and Time on the Annealing of lonizing Radiation Induced Insulator Damage in N-channel IGFET's
- A. Reisman
- C.J. Merz
- 2019
- JES
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39 results for Arnold Reisman
X-Ray Damage Considerations in MOSFET Devices
- J.R. Maldonado
- S.S. Iyer
- 2019
- JES
Role of Copper Ions in Low‐Melting Solder Glasses
- TAKESHI TAKAMORI
- ARNOLD REISMAN
- et al.
- 2006
- JACerS
Compound repetition in oxide-oxide interactions: The system Li2O-V2O5
- Arnold Reisman
- Joan Mineo
- 2002
- Journal of Physical Chemistry
Compound repetition in oxide systems. Solid phases in the system Li2O-Ta2O5 and Na2O-Ta2O5
- Arnold Reisman
- 2002
- Journal of Physical Chemistry
The non-detonative synthesis of cadmium selenide and other II-VI compounds from the elements
- A. Reisman
- M. Berkenblit
- 2002
- Journal of Physical Chemistry
Generation and annealing of defects in silicon dioxide
- A. Reisman
- C.K. Williams
- et al.
- 1987
- Journal of Applied Physics
Some properties of crystallized tantalum pentoxide thin films on silicon
- G.S. Oehrlein
- F.M. D'Heurle
- et al.
- 1984
- Journal of Applied Physics
Nitridation of silicon in a multiwafer plasma system
- A. Reisman
- M. Berkenblit
- et al.
- 1984
- Journal of Electronic Materials
Electrical properties of amorphous tantalum pentoxide thin films on silicon
- G.S. Oehrlein
- A. Reisman
- 1983
- Journal of Applied Physics