Thermally stable ohmic contacts to n-type GaAs. II. MoGeInW contact metal
- Masanori Murakami
- W.H. Price
- et al.
- 1987
- Journal of Applied Physics
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22 results for N. Braslau
Barrier heights and electrical properties of intimate metal-AlGaAs junctions
- M. Eizenberg
- M. Heiblum
- et al.
- 1987
- Journal of Applied Physics
Effect of interface states on the electrical properties of W, WSi x, and WAlx Schottky contacts on GaAs
- A.C. Callegari
- D. Ralph
- et al.
- 1987
- Journal of Applied Physics
Electron velocity and negative differential mobility in AlGaAs/GaAs modulation-doped heterostructures
- W.T. Masselink
- N. Braslau
- et al.
- 1987
- Applied Physics Letters
Contact and metallization problems in GaAs integrated circuits
- N. Braslau
- 1986
- JVSTA
Ohmic contacts to GaAs
- Norman Braslau
- 1983
- Thin Solid Films
VA-5 GaAs Lossy Gate Dielectric FET
- T.L. Andrade
- N. Braslau
- 1981
- IEEE T-ED
Importance of the diffuse sky radiation in evaluation of the performance of a solar cell
- J.V. Dave
- Norman Braslau
- 1976
- Solar Energy
Microwave Measurement of the Velocity-Field Characteristic of GaAs
- N. Braslau
- P.S. Hauge
- 1970
- IEEE T-ED
Velocity-field characteristic of gallium arsenide from measurement of the conductivity in a microwave field
- N. Braslau
- 1967
- Physics Letters A