The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor processP.B. PerryR.F. Rutz2008Applied Physics Letters
GaAs lnjection laser with novel mode control and switching propertiesMarshall I. NathanJ.C. Marinaceet al.1965Journal of Applied Physics
GaAs Optically Coupled Transistor with a Lasing EmitterR.F. RutzM.I. Nathanet al.1965Proceedings of the IEEE
Transistor-Like Device Using Optical Coupling Between Diffused P-N Junctions in GaAsR.F. Rutz1963Proceedings of the IEEE